CONTACT
Photo & EUV Mask
특징
1. By adopting HHT (Hitachi High-Tech)’s advanced repair technology and the latest platform, a repair accuracy of 15 nm @ 3σ or better is achieved within a 10 μm FOV.
2. Adjustable probe current enables high-throughput operation.
3. Processing damage is minimized through EPM functionality using secondary ions and electrons.
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SPEC |
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Ion Source & Beam Diameter |
Gallium, 30 kV, 5~100 pA / 30 nm @ 5 pA |
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FOV @ Repair &Scan Method @ Repair |
Multi FOV & Raster/Vector |
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Imaging for Defect Recognition&Drift Compensation |
Secondary Electron Image with Dynamic Range Enhancement /1-Point, Pattern Edge |
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End-Point Monitor @ Etching |
2ndary Ion, 2ndary electron |
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Current Switching Function |
Available |
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Repair Position Repeatability (on Mask) |
15 nm @ 7pA이하(10um-FOV) |
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SECS/GEM Communication |
Negotiable |