CONTACT
Photo & EUV Mask
특징
1. Low initial investment cost with high accuracy and process reliability compared to photolithography-based marking.
2. Contamination-free blank surface after FM processing and compact installation footprint.
3. Dedicated software for Fiducial Mark processing with SEMI-AUTO operation.
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SPEC |
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Ion Source & Beam Diameter |
Gallium, 15 - 30 kV, 5~500 PA |
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Scan Method |
Raster/Vector |
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FOV & Pixel |
10 - 640um / 1600 * 1600 Pixels |
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Image & Repair Method |
2ndary electron/ Sputtering |
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Mask Size |
6025 Mask |
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SMIF Pod |
RSP-200(Entegris) |
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SECS/GEM Communication |
Negotiable |